NP109N04PUJ
500
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
1000
FORWARD TRANSFER CHARACTERISTICS
400
300
200
100
10
1
0.1
T A = ? 55 ° C
25 ° C
85°C
150°C
175°C
100
V GS = 10 V
0.01
V DS = 10 V
0
Pulsed
0.001
Pulsed
0
0.2
0.4
0.6
0.8
1
1
2
3
4
5
V DS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
4
1000
V GS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
3
2
100
T A = ? 55 ° C
25 ° C
85 ° C
1
V DS = V GS
I D = 250 μ A
10
150 ° C
175 ° C
V DS = 5 V
Pulsed
0
1
-100
-50
0
50
100
150
200
1
10
100
1000
T ch - Channel Temperature - ° C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
5
I D - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
5
4
3
2
1
0
V GS = 10 V
Pulsed
4
3
2
1
0
I D = 55 A
Pulsed
1
10
100
1000
0
5
10
15
20
25
4
I D - Drain Current - A
Data Sheet D19728EJ1V0DS
V GS - Gate to Source Voltage - V
相关PDF资料
NP109N055PUJ-E1B-AY MOSFET N-CH 55V MP-25ZP/TO-263
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